4 edition of The Physics and chemistry of SiO₂ and the Si-SiO₂ interface 2 found in the catalog.
Published
1993
by Plenum Press in New York
.
Written in English
Edition Notes
Statement | edited by C. Robert Helms and Bruce E. Deal. |
Contributions | Helms, C. Robert., Deal, Bruce E., Electrochemical Society. Electronics Division., Electrochemical Society. Dielectric Science and Technology Division., Symposium on the Physics and Chemistry of the SiO₂ and Si-SiO₂ Interface (2nd : 1992 : St. Louis, Mo.) |
Classifications | |
---|---|
LC Classifications | QC585.75.S55 P48 1993 |
The Physical Object | |
Pagination | xvi, 503 p. : |
Number of Pages | 503 |
ID Numbers | |
Open Library | OL1405806M |
ISBN 10 | 0306444194 |
LC Control Number | 93014058 |
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Get this from a library. The physics and chemistry of SiO₂ and the Si-SiO₂ interface 2. [C Robert Helms; Bruce E Deal; Electrochemical Society. Electronics Division,; Electrochemical Society. Dielectric Science and Technology Division,;] -- The first international symposium on the subject "The Physics and Chemistry of Si02 and the Si-Si02 Interface," organized in association with.
ISBN: OCLC Number: Notes: Proceedings of the Second Symposium on the Physics and Chemistry of the SiO₂ and Si-SiO₂ Interface, held May, in St. Louis, Missouri, sponsored by the Electronics Division and the Dielectric Science and Technology Division of the Electrochemical Society.
The properties of Si02 and the Si-Si02 interface provide the key foundation onto which the majority of semiconductor device technology has been built Their study has consumed countless hours of many hundreds of investigators over the years, not only in the field of semiconductor devices but also in ceramics, materials science, metallurgy, geology, and mineralogy, to name.
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