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Sunday, May 3, 2020 | History

4 edition of The Physics and chemistry of SiO₂ and the Si-SiO₂ interface 2 found in the catalog.

The Physics and chemistry of SiO₂ and the Si-SiO₂ interface 2

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  • 22 Currently reading

Published by Plenum Press in New York .
Written in English

    Subjects:
  • Silica -- Surfaces -- Congresses,
  • Dielectrics -- Surfaces -- Congresses,
  • Silicon dioxide films -- Congresses,
  • Surface chemistry -- Congresses,
  • Surfaces (Technology) -- Congresses

  • Edition Notes

    Statementedited by C. Robert Helms and Bruce E. Deal.
    ContributionsHelms, C. Robert., Deal, Bruce E., Electrochemical Society. Electronics Division., Electrochemical Society. Dielectric Science and Technology Division., Symposium on the Physics and Chemistry of the SiO₂ and Si-SiO₂ Interface (2nd : 1992 : St. Louis, Mo.)
    Classifications
    LC ClassificationsQC585.75.S55 P48 1993
    The Physical Object
    Paginationxvi, 503 p. :
    Number of Pages503
    ID Numbers
    Open LibraryOL1405806M
    ISBN 100306444194
    LC Control Number93014058


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The Physics and chemistry of SiO₂ and the Si-SiO₂ interface 2 Download PDF EPUB FB2

Get this from a library. The physics and chemistry of SiO₂ and the Si-SiO₂ interface 2. [C Robert Helms; Bruce E Deal; Electrochemical Society. Electronics Division,; Electrochemical Society. Dielectric Science and Technology Division,;] -- The first international symposium on the subject "The Physics and Chemistry of Si02 and the Si-Si02 Interface," organized in association with.

ISBN: OCLC Number: Notes: Proceedings of the Second Symposium on the Physics and Chemistry of the SiO₂ and Si-SiO₂ Interface, held May, in St. Louis, Missouri, sponsored by the Electronics Division and the Dielectric Science and Technology Division of the Electrochemical Society.

The properties of Si02 and the Si-Si02 interface provide the key foundation onto which the majority of semiconductor device technology has been built Their study has consumed countless hours of many hundreds of investigators over the years, not only in the field of semiconductor devices but also in ceramics, materials science, metallurgy, geology, and mineralogy, to name.

Stanford Libraries' official online search tool for books, media, journals, databases, government documents and more. Electronic and chemical properties of the c-Si/Al2O3 interface Article in Journal of Applied Physics (11) June with Reads How we measure 'reads'.

Request PDF | First Principles Calculations of Bonding and Charges at the Al2O3 Interface in a c-Si/SiO2/am-Al2O3 Structure Applicable for the Surface Passivation of Silicon-Based Solar Cells |. Proc. SPIENanophotonic Materials XV, (8 October ); doi: / Journal Article: A new determination of Avogadro’s number from lattice constant and density of single crystals.

The growth of the hNT neurons was promoted by 30% compared to the control Si/SiO₂ substrate surface when ZnO nanowires with lengths shorter than nm and densities higher than NWs/µm² were grown. The hNT neurons on all nanowires were also demonstrated to be functionally viable as they responded to the glutamate stimulation.

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